基于碳化硅的高功率密度矩阵变换器

doi:10.16628/j.cnki.2095-8188.2020.07.003

摘要/Abstract

摘要：

总结了矩阵变换器的主要电路拓扑和双空间矢量调制方式。针对四步换流法和两步换流法存在的问题,提出在碳化硅结型场效应晶体管(SiC-JFET)矩阵变换器中采用四步换流法、三步换流法和直接换流法相结合的换流方法。新一代SiC-JFET管具有高电压应力、低通态阻抗、高开关频率等特点,适合应用于如高功率密度矩阵变换器等场合。设计了基于1 200 V/6 A SiC-JFET的直接式矩阵变换器样机,样机开关频率为200 kHz,功率密度为3 kVA/L,讨论了矩阵变换器样机的结构设计。实验结果证明,SiC-JFET适合应用于高开关频率、高功率密度矩阵变换器。

关键词: 矩阵变换器, 换流, 碳化硅, 结型场效应晶体管

Abstract:

The mainly circuit topologies of the matrix converter were reviewed and also the double space vector modulation strategy for the matrix converter control was analyzed.Problems existed in traditional four-step and two-step commutation strategies were analyzed and a hybrid commutation strategy which combines four-step commutation,three-step commutation and directly commutation was used in the SiC-JFET matrix converter commutation.New SiC switches such as the JFET,which are provided simultaneously with high voltage blocking,low switching losses and low on-state resistance,offer new possibilities and allow for implementing a high switching frequency matrix converter.The matrix converter prototype was designed specifically for 1 200 V,6 A SiC JFETs for a target switching frequency of 200 kHz with the power density of 3 kVA/L.The design and physical construction of the matrix converter are also discussed.The experimental results show that the SiC-JFET adapts a high switching frequency matrix converter.

Key words: matrix converter, commutation strategy, SiC, junction field-effect transistor (JFET)

中图分类号:

TM464

黄蕾. 基于碳化硅的高功率密度矩阵变换器[J]. 电器与能效管理技术, 2020, 592(7): 16-24.

HUANG Lei. Silicon Carbide High Power Density Matrix Converter[J]. LOW VOLTAGE APPARATUS, 2020, 592(7): 16-24.

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