基于GaN器件的单相逆变器TCM控制策略研究

doi:10.16628/j.cnki.2095-8188.2024.02.007

摘要/Abstract

摘要：

氮化镓(GaN)高电子迁移率晶体管具有开关速度快、器件损耗小的优点,在高频应用场合得到广泛应用。为了进一步提高变换器效率和功率密度,将三角电流模式(TCM)调制用于基于GaN器件的单相逆变器中,通过控制负向电流与死区时间实现了全范围零电压开关(ZVS),达到提高变换器效率和功率密度的目的。搭建了1台样机进行验证,实验结果表明,TCM调制在不同负载条件下均可实现软开关,最大开关频率可达300 kHz,峰值效率可达98.5%。

关键词: 氮化镓, 高电子迁移率晶体管, 单相逆变器, 三角电流模式, 零电压开关

Abstract:

Gallium nitride (GaN) high electron mobility transistor (HEMT) has the advantages of fast switching speed and low device loss, and is widely used in high frequency applications. In order to further improve the efficiency and power density of the converter, the triangle current mode (TCM) modulation is applied to the single-phase inverter based on GaN device.The full range zero voltage switching (ZVS) is realized by controlling the negative current and dead time, so as to improve the efficiency and power density of the converter. A prototype is built for verification. The experimental results show that TCM modulation can achieve soft switching under different load conditions. The maximum switching frequency can reach 300 kHz, and the peak efficiency can reach 98.5%.

Key words: gallium nitride (GaN), high electron mobility transistor(HEMT), signal phase inverter, triangle current mode (TCM), zero voltage switching (ZVS)

中图分类号:

TM464

陈钰, 周宝鼎. 基于GaN器件的单相逆变器TCM控制策略研究[J]. 电器与能效管理技术, 2024, 0(2): 39-43.

CHEN Yu, ZHOU Baoding. Research on TCM Control Strategy of Single-Phase Inverter Based on GaN[J]. LOW VOLTAGE APPARATUS, 2024, 0(2): 39-43.

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参数	数值
直流侧电压U_dc/V	360
输出电压U_g/V	工频交流220
最大开关频率f_s/kHz	500
滤波电感L₁、L₂/μH	40
L₁、L₂寄生电阻R₁、R₂/Ω	1×10^-3
滤波电容C/μF	5
负载/Ω	165