LOW VOLTAGE APPARATUS ›› 2020, Vol. 592 ›› Issue (7): 16-24.doi: 10.16628/j.cnki.2095-8188.2020.07.003

• Research & Analysis • Previous Articles     Next Articles

Silicon Carbide High Power Density Matrix Converter

HUANG Lei   

  1. Shanghai Chint Power Systems Co.,Ltd., Shanghai 201614, China
  • Received:2020-02-29 Online:2020-07-30 Published:2020-08-10

Abstract:

The mainly circuit topologies of the matrix converter were reviewed and also the double space vector modulation strategy for the matrix converter control was analyzed.Problems existed in traditional four-step and two-step commutation strategies were analyzed and a hybrid commutation strategy which combines four-step commutation,three-step commutation and directly commutation was used in the SiC-JFET matrix converter commutation.New SiC switches such as the JFET,which are provided simultaneously with high voltage blocking,low switching losses and low on-state resistance,offer new possibilities and allow for implementing a high switching frequency matrix converter.The matrix converter prototype was designed specifically for 1 200 V,6 A SiC JFETs for a target switching frequency of 200 kHz with the power density of 3 kVA/L.The design and physical construction of the matrix converter are also discussed.The experimental results show that the SiC-JFET adapts a high switching frequency matrix converter.

Key words: matrix converter, commutation strategy, SiC, junction field-effect transistor (JFET)

CLC Number: