Silicon Carbide High Power Density Matrix Converter

doi:10.16628/j.cnki.2095-8188.2020.07.003

Abstract

Abstract:

The mainly circuit topologies of the matrix converter were reviewed and also the double space vector modulation strategy for the matrix converter control was analyzed.Problems existed in traditional four-step and two-step commutation strategies were analyzed and a hybrid commutation strategy which combines four-step commutation,three-step commutation and directly commutation was used in the SiC-JFET matrix converter commutation.New SiC switches such as the JFET,which are provided simultaneously with high voltage blocking,low switching losses and low on-state resistance,offer new possibilities and allow for implementing a high switching frequency matrix converter.The matrix converter prototype was designed specifically for 1 200 V,6 A SiC JFETs for a target switching frequency of 200 kHz with the power density of 3 kVA/L.The design and physical construction of the matrix converter are also discussed.The experimental results show that the SiC-JFET adapts a high switching frequency matrix converter.

Key words: matrix converter, commutation strategy, SiC, junction field-effect transistor (JFET)

CLC Number:

TM464

HUANG Lei. Silicon Carbide High Power Density Matrix Converter[J]. LOW VOLTAGE APPARATUS, 2020, 0(7): 16-24.

Figures/Tables 24

References 18

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