Equivalent Modeling Method of SiC MOSFET Based on Graphical Modification

doi:10.16628/j.cnki.2095-8188.2022.04.002

Abstract

Abstract:

Accurate SPICE model of SiC MOSFET will play an important role in product simulation and testing.A modeling method of SiC MOSFET is introduced.The spice model of CPM3-0900-0010A is established and modified by combining automatic fitting with graphic correction technology considering physical meaning.The established model characteristic curve fits well with the measured curve provided by the product parameter manual.The key parameters generated in the modeling process are more consistent with the parameters provided in the product parameter manual,which improves the preciseness and accuracy of the simulation model.Compared with the actual test results,the fitting effect of the model is good,which can provide the basis for the simulation method of complex circuit with SiC MOSFET,and provide support for more accurate evaluation of the performance and system characteristics of SiC MOSFET.

Key words: SiC MOSFET, modeling, graphical correction, simulation, curve fitting

CLC Number:

TM46

WANG Zicheng, LAI Yaokang, WANG Haonan, CAO Yufeng, YE Xuerong, ZHAI Guofu. Equivalent Modeling Method of SiC MOSFET Based on Graphical Modification[J]. LOW VOLTAGE APPARATUS, 2022, 0(4): 6-11.

Figures/Tables 9

References 8

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参数	释义	数值
T/℃	仿真温度	25
U_th/V	阈值电压	3.766 2
U_gs0/V	饱和时栅极电压	7
U_ds0/V	饱和时漏源电压	5.044 9
I_ds0/A	饱和时漏源电流	90.549 0
R_ds0/Ω	导通电阻	0.019 2
R_d/Ω	漏极等效电阻	0.005 7
R_s/Ω	源极等效电阻	0.000 1
R_g/Ω	栅极等效电阻	0.001 0
λ	沟道调制效应参数	0.039 9

参数	参考值	调整前	调整后
T_i/℃	25	25	25
U_th/V	1.7~3.5	3.7662	3.414
R_ds0/mΩ	10.0~12.0	19.2	11.6
λ	0.010 0	0.039 9	0.012 1

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