Abstract:

With the development of electric aircraft,the solid-state power controller(SSPC)composed of SiC devices has gradually become a hotspot at home and abroad.Due to the complex structure of SSPC and the need for frequent debugging,accurate simulation models can provide great help for product design.This article mainly used software such as Ansys Q3D Extractor to extract the parasitic parameters based on the product structure of the SSPC composed of the third generation CREE SiC MOSFET,and established the SSPC single-channel and overall electrical equivalent models.The characteristics of SSPC’s resistive load switching were analyzed and it was found that there is no obvious oscillation in the waveform.Finally,it was concluded that the influence of parasitic parameters can be ignored.

Key words: SSPC, parasitic parameter, electrical equivalent model, SiC MOSFET, switching characteristics