Thermal Analysis of SiC MOSFET Power Module Based on Die Package

doi:10.16628/j.cnki.2095-8188.2022.08.006

Abstract

Abstract:

SiC MOSFETs are widely used in the design of high-power solid-state power controllers due to the high temperature and high voltage resistance advantages.Aiming at the working conditions of solid-state power controllers,the die-packaged SiC MOSFETs are selected.The stacked structure of the power module is designed and its thermal resistance is analyzed.The selection and layout of the bonding structure is designed.The thermal influence of the package connection copper wire and copper tape is analyzed.Based on the packaging design,the thermal performance of the power module is evaluated by the finite element simulation.Finally,a platform for single channel thermal test is build.The results verify the accuracy of the simulation and the rationality of the packaging design.

Key words: SiC MOSFET, die package, thermal circuit theory, solid-state power controller, finite element thermal simulation

CLC Number:

TM46

WANG Haonan, CAO Yufeng, LAI Yaokang, HU Caixia, ZHANG Hongyu, WANG Zicheng, ZHAI Guofu. Thermal Analysis of SiC MOSFET Power Module Based on Die Package[J]. LOW VOLTAGE APPARATUS, 2022, 0(8): 39-43.

Figures/Tables 15

References 7

[1]	叶雪荣, 郑志洪, 陈哲, 等. 固态功率控制器国内外发展现状[J]. 电器与能效管理技术, 2015(2):1-5.
[2]	张开新, 郑志洪, 叶雪荣, 等. 基于Saber的固态功率控制器行为模型及其应用研究[J]. 电器与能效管理技术, 2019(2):8-13.
[3]	王浩南, 赖耀康, 张宏宇, 等. 基于产品结构的SSPC寄生参数提取及阻性负载开关特性仿真分析[J]. 电器与能效管理技术, 2021(2):20-25.
[4]	张琦, 曾燕萍, 袁伟星, 等. 大功率高性能SiP的电热耦合分析[J]. 电子与封装, 2021, 21(8):87-91.
[5]	马铭遥, 郭伟生, 严雪松, 等. 用于电动汽车功率模块热分析的紧凑型热网络模型[J]. 中国电机工程学报, 2020, 40(18):5796-5805.
[6]	张宏宇. 多通道SiC固态功率控制器电热仿真及并联均流设计[D]. 哈尔滨: 哈尔滨工业大学, 2020.
[7]	张开新. 高压大功率SiC固态功率控制器的仿真与设计[D]. 哈尔滨: 哈尔滨工业大学, 2019.

材料	导热率K_i/ [W·(m·K)^-1]	厚度L_i/ mm	总计热阻值/ (K·W^-1)
SiC MOSFET	148	0.3
焊料(SnPb)	49	0.1
DBC上铜层	401	0.3
DBC陶瓷夹层	21	0.38	2.21
DBC下铜层	-	-
导热胶	0.5	0.1
铜底座	-	2.5

测试点	测试值/mΩ	测试点	测试值/mΩ
AC	91	DE	85
AD	73	EG	105
AE	146	EH	65
DF	102

名称	材料	导热率/ [W·(m·K)^-1]	比热/ [J·(kg·K)^-1]
键合引线	铝	98	902
SiC MOSFET	SiC	148	300
焊料层	Sn₆₃Pb₃₇	49	176
DBC铜层	铜	401	385
DBC陶瓷夹层	Al₂O₃	21	896
灌封胶	Mask	0.17	795
PCB	FR-4	0.35	1 300