Consistent Robust Design of Bistable Crystal Cover Relay

doi:10.16628/j.cnki.2095-8188.2022.10.002

Abstract

Abstract:

The bistable crystal cover relay has outstanding adaptability to the endurance environment,but there are the quality problems such as small debugging margin and large product dispersion,which is difficult to meet the requirements of continuously improving reliability indicators of electronic systems.Aiming at the problems such as poor anti-interference of output characteristics caused by the imperfect reliability design theory of relays at present,the simulation model of relay electromagnetic system and contact spring system is established.The robust design method proposed by Taguchi Genichi is used to optimize the relay product parameters and their tolerances in order to improve their reliability.The research conclusions are applied to the improvement of a certain type of electromagnetic relay,and its related methods can be applied to the design of other electrical products,which can provide the necessary research methods and foundations for the robust design of electromagnetic relays.

Key words: electromagnetic relay, reliability, robust design, simulation analysis

CLC Number:

TM581.3

LIU Guilin, WEI Zitong, LIANG Huimin, ZHANG Jie, ZHANG Jingbo. Consistent Robust Design of Bistable Crystal Cover Relay[J]. LOW VOLTAGE APPARATUS, 2022, 0(10): 9-16.

Figures/Tables 17

来源	自由度f	方差V	纯波动S'	贡献率ρ/%
m	1	0.0163 16	0.0138 93	6.213 91
A_l	1	0.0049 96	0.002 573	1.150 99
$A q △$	1	—	—	—
B_l	1	0.0124 18	0.009 995	4.470 63
$B q △$	1	—	—	—
C_l	1	0.0273 83	0.024 96	11.164 1
$C q △$	1	—	—	—
$D l △$	1	—	—	—
$D q △$	1	—	—	—
E_l	1	0.045 895	0.043 472	19.444 1
E_q	1	0.006 336	0.003 914	1.750 45
F_l	1	0.083 579	0.081 156	36.299 3
$F q △$	1	—	—	—
e	5	0.004 082	0.073 479	32.865 6
$e —$	11	0.002 423	0.043 612	19.506 5
T	18	0.0124 21	0.223 575	100

来源	自由度f	方差V	纯波动S'	贡献率ρ/%
m	1	0.074 935	0.074 609	83.015 600
A_l	1	0.001 682	0.001 355	1.507 730
$A q △$	1	—	—	—
B_l	1	0.001 119	0.000 792	0.881 213
B_q	1	0.000 711	0.000 384	0.426 943
C_l	1	0.002 864	0.002 537	2.822 910
$C q △$	1	—	—	—
$D l △$	1	—	—	—
D_q	1	0.000 696	0.000 369	0.410 565
E_l	1	0.003 715	0.003 388	3.769 730
E_q	1	0.000 563	0.000 236	0.262 179
$F l △$	1	—	—	—
F_q	1	0.000 647	0.000 320	0.356 521
e	5	0.000 477	0.008 583	9.550 22
$e —$	9	0.000 327	0.005 884	6.546 66
T	18	0.004 993	0.089 873	100

来源	自由度f	方差V	纯波动S'	贡献率ρ/%
m	1	0.023 960	0.019 422	3.276 27
A_l	1	0.162 453	0.157 916	26.638 50
A_q	1	0.008 427	0.003 889	0.656 06
B_l	1	0.057 074	0.052 537	8.862 29
$B q △$	1	—	—	—
C_l	1	0.038 119	0.033 581	5.664 67
$C q △$	1	—	—	—
D_l	1	0.079 044	0.074 506	12.568 30
$D q △$	1	—	—	—
E_l	1	0.057 614	0.053 076	8.953 30
E_q	1	0.017 254	0.012 716	2.145 08
F_l	1	0.099 179	0.094 641	15.964 80
F_q	1	1.34E-02	0.008 846	1.492 18
e	5	0.003 666	0.065 983	11.130 50
$e —$	8	0.004 538	0.081 681	13.778 50
T	18	0.032 934	0.592 809	100

来源	自由度f	方差V	纯波动S'	贡献率ρ/%
m	1	0.001 948	0.001 732	0.712 58
A_l	1	0.028 745	0.028 529	11.737 30
$A q △$	1	—	—	—
B_l	1	0.005 000	0.004 785	1.968 44
B_q	1	0.000 751	0.000 535	0.220 02
C_l	1	0.003 974	0.003 758	1.546 20
$C q △$	1	0.001 830	0.001 614	0.663 88
D_l	1	1.90E-01	0.189 902	78.128 80
$D q △$	1	0.000 863	0.000 647	0.2661 36
E_l	1	0.006 609	0.006 393	2.630 11
E_q	1	0.000 692	0.000 476	0.195 76
$F l △$	1	—	—	—
F_q	1	0.001 022	0.000 806	0.331 59
e	5	0.000 254	0.004 572	1.880 87
$e —$	7	0.000 216	0.003 887	1.599 16
T	18	0.013 504	0.243 063	100

References 21

[1]	周学, 王其亚, 翟国富. 航天电磁继电器动态特性分析与研究[J]. 低压电器, 2007(15):12-16.
[2]	白涌如, 姚之驹. 中国继电器市场研究分析[J]. 电器工业, 2006(7):8-12.
[3]	董宝旭, 王淑娟, 孟彦辰, 等. 基于Wiener过程的航天继电器可靠性评估方法[J]. 电器与能效管理技术, 2015(11):12-16,36.
[4]	陈立周. 稳健设计[M]. 北京: 机械工业出版社, 2000.
[5]	陈康宁, 王召斌, 李朕, 等. 继电器贮存可靠性评估与寿命试验方法综述[J]. 电器与能效管理技术, 2020(12):1-6.
[6]	邵家骏, 韩之俊, 李锦华, 等. 健壮设计手册[M]. 北京: 国防工业出版社, 2002.
[7]	朱旭晴, 梁慧敏, 张家赫, 等. 电磁继电器触簧系统关键装配参数退化建模与可靠性评估[J]. 电器与能效管理技术, 2020(4):1-6.
[8]	邓杰. 航天电磁继电器稳健性设计研究[D]. 哈尔滨: 哈尔滨工业大学, 2010.
[9]	杜士平. 磁保持继电器的稳健性研究[D]. 天津: 河北工业大学, 2017.
[10]	SCHOEPF T J, DREW G A. Disengaging connectors under automotive 42 VDC loads[J]. IEEE Transactions on Components and Packaging Technologies, 2002, 27(1):57-64. doi: 10.1109/TCAPT.2004.825789
[11]	苏秀苹, 杜士平, 乔延华, 等. 磁保持继电器的稳健性参数设计[J]. 河北工业大学学报, 2017, 46(5):17-22.
[12]	翟国富, 梁慧敏, 王嗥, 等. 基于正交试验设计的极化磁系统参数优化设计方法的研究[J]. 中国电机工程学报, 2003, 23(10):157-163.
[13]	吴岳, 邓杰. 航天继电器电磁系统质量一致性参数优化设计[J]. 电器与能效管理技术, 2018(18):32-36,73.
[14]	JIANGG Q, GUO F Y, WANG Z Y, et al. Research on the new type permanent magnetic actuator (PMA) intelligent AC contactor[C]// 2010 International Conference on Measuring Technology and Mechatronics Automation, 2010, 3:211-214.
[15]	吴岳, 邓杰, 翟国富. 大功率接触器质量一致性稳健设计研究[J]. 电器与能效管理技术, 2018(6):1-6,29.
[16]	苏秀苹, 杜士平. 三相磁保持继电器动态特性分析及容差设计[J]. 电器与能效管理技术, 2018(4):50-54.
[17]	WENG W C, CHOI C T M, Wang S. Optimal feed positions for microstripline-fed rectangular patch antennas by finite difference time domain analysis:APMC 2001.2001 Asia-Pacific Microwave Confer-ence[C].2001.
[18]	HWANG C C, CHANG C M, LI P L. Design optimization for cogging torque minimization and efficiency maximization of a high-speed PM motor:2007 IEEE International Electric Machines & Drives Confer-ence[C]. 2009.
[19]	叶雪荣. 基于动态特性的航天电磁继电器可靠性容差设计技术研究.[D]. 哈尔滨: 哈尔滨工业大学, 2009.
[20]	梁慧敏, 翟国富. 航天电磁继电器三次设计[M]. 哈尔滨: 哈尔滨工业大学出版社, 2014.
[21]	邵家俊. 健壮设计手册[M]. 北京: 国防工业出版社, 2009.

参数	贡献率/%	参数	贡献率/%
衔铁台阶高度	35.79	永磁体宽度	20.20
衔铁宽度	17.85	永磁体厚度	19.38
永磁体长度	0.70	铁心半径	4.70

试验号	衔铁台阶高/mm	衔铁宽度/mm	永磁体厚度/mm	永磁体宽度/mm	信噪比/dB
1	0.47	2.96	1.68	3.82	19.360 2
2	0.47	3.7	1.80	4.10	14.884 9
3	0.47	4.44	1.92	4.38	17.390 4
4	0.57	2.96	1.92	4.10	16.230 0
5	0.57	3.70	1.68	4.38	18.573 2
6	0.57	4.44	1.80	3.82	16.512 5
7	0.67	2.96	1.80	4.38	20.675 2
8	0.67	3.70	1.92	3.82	17.310 0
9	0.67	4.44	1.68	4.10	20.880 7

水平	A/mm	B/mm	C/mm	D/mm	E/T	F/mm
1	3.662 5	0.55	4.062 5	1.77	0.72	0.008
2	3.700 0	0.57	4.100 0	1.80	0.74	0.009
3	3.737 5	0.59	4.137 5	1.83	0.76	0.010

水平	A/mm	B/mm	C/mm	D/mm	E/T	F/mm
1	-0.065	-0.1	-0.075	-0.1	0.72	0.008
2	0	0	0	0	0.74	0.009
3	0.065	0.1	0.075	0.1	0.76	0.01

参数	衔铁左右位置	轭铁平行度	衔铁前后位置	永磁体安装位置
原方案公差/mm	0.100	0.10	0.075	0.065
改进后公差/mm	0.005	0.02	0.040	0.030
磁保持力一致性提升百分比δ/%	50.18
中位余量一致性提升百分比δ/%	49.68