A Method for Determining Temperature Coefficient of Contact Resistance of Switching Devices

doi:10.16628/j.cnki.2095-8188.2025.09.009

Abstract

Abstract:

A method of calculating the temperature coefficient of contact resistance of switching devices is introduced.By comparing the difference of temperature rise whether the temperature coefficient of contact resistance is considered or not,validating through tests,and explaining the temperature characteristics of contact resistance by the electric contact theory. The proposed method can be used for thermal simulation of switching device,and has strong practical operability.Considering the temperature coefficient of contact resistance,the thermal simulation accuracy can be improved.

Key words: contact resistance, switching device, temperature coefficient of resistance, thermal simulation

CLC Number:

TM501.4

XIAO Jiaren, LIU Wensheng, ZHUANG Niangshe. A Method for Determining Temperature Coefficient of Contact Resistance of Switching Devices[J]. LOW VOLTAGE APPARATUS, 2025, 0(9): 67-70.

接触材料	表面情况	K	接触材料	表面情况	K
银-银	未氧化	60	铝-黄铜	未氧化	1 900
铜-铜	未氧化	80~140	镀锡的铜-镀锡的铜	未氧化	100
黄铜-黄铜	未氧化	670	AgCdO₁₂- AgCdO₁₂	未氧化氧化	170 350
铝-铜	未氧化	980

部位	项目	热稳态	冷态22 ℃
部位	项目	仿真计算值		仿真计算值	实测值	差值
接触电阻 (单个触点)	触点接触电阻/μΩ	38.30	52.50		51.17		2.54%
	触点接触电阻压降/mV	22.978	31.000		—		—
	接触电阻功耗/W	13.79	18.60		—		—
端子连接处	端子接触电阻/μΩ	3.62	3.62		—		—
	端子接触电阻/mV	2.17	2.17		—		—
	端子接触电阻功耗/W	2.61	2.61		—		—
导体	导体压降/mV	30.7	22.0		—		—
	导体电阻/μΩ	51.17	36.67		—		—
	导体功耗/W	18.42	13.20		—		—
进-出线端总值	总电阻/μΩ	135.00	147.24		139		5.90%
	总压降/mV	81.00	88.34		87.20		1.30%
	总功耗/W	48.60	53.01		—		—

热稳态参数	考虑接触电阻温度系数	未考虑接触电阻温度系数(赋功率)	实测值
最高点温度/℃	128	150	—
端子温度/℃	102	117	99
总压降/mV	81	97	81

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A Method for Determining Temperature Coefficient of Contact Resistance of Switching Devices

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