Abstract:

The output capacitance of semiconductor devices exhibits nonlinear changes with increasing voltage.In order to accurately extract the output junction capacitance under high voltage operating conditions,a measured method for the output junction capacitance of semiconductor devices based on the transient switching oscillation process is proposed.Firstly,the mathematical relationship between the high frequency oscillation frequency of device turnoff transient excitation and the junction capacitance are explored,and the corresponding extraction steps is formed.Secondly,the factors affecting the accuracy are discussed from the perspectives of parasitic inductance and parasitic resistance.Finally,a testing platform is built and the extraction results of semiconductor devices of different models and packages are verified.The experiment shows that the proposed method can extract the output junction capacitance value at the rated operating point of the device,and has advantages such as high testing consistency and strong scalability.

Key words: non linearity, turn off oscillation, output junction capacitance, high voltage semiconductor devices