Research on TCM Control Strategy of Single-Phase Inverter Based on GaN

doi:10.16628/j.cnki.2095-8188.2024.02.007

Abstract

Abstract:

Gallium nitride (GaN) high electron mobility transistor (HEMT) has the advantages of fast switching speed and low device loss, and is widely used in high frequency applications. In order to further improve the efficiency and power density of the converter, the triangle current mode (TCM) modulation is applied to the single-phase inverter based on GaN device.The full range zero voltage switching (ZVS) is realized by controlling the negative current and dead time, so as to improve the efficiency and power density of the converter. A prototype is built for verification. The experimental results show that TCM modulation can achieve soft switching under different load conditions. The maximum switching frequency can reach 300 kHz, and the peak efficiency can reach 98.5%.

Key words: gallium nitride (GaN), high electron mobility transistor(HEMT), signal phase inverter, triangle current mode (TCM), zero voltage switching (ZVS)

CLC Number:

TM464

CHEN Yu, ZHOU Baoding. Research on TCM Control Strategy of Single-Phase Inverter Based on GaN[J]. LOW VOLTAGE APPARATUS, 2024, 0(2): 39-43.

Figures/Tables 11

References 21

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参数	数值
直流侧电压U_dc/V	360
输出电压U_g/V	工频交流220
最大开关频率f_s/kHz	500
滤波电感L₁、L₂/μH	40
L₁、L₂寄生电阻R₁、R₂/Ω	1×10^-3
滤波电容C/μF	5
负载/Ω	165